symbol v ds v gs i dm t j , t stg symbol typ max 18 25 49 60 r jc 2.9 4 c 38 19 -55 to 175 w 1.3 w continuous drain current b maximum units parameter t c =25c t c =100c -30 i d -38 -27 -70 power dissipation a t a =25c p dsm 2.1 t c =100c t a =70c p d -9 t c =25c gate-source voltage maximum junction-to-ambient a steady-state junction and storage temperature range continuous drain current a t a =25c i dsm t a =70c t 10s c/w c/w -7 absolute maximum ratings t a =25c unless otherwise noted v v 25 drain-source voltage pulsed drain current c power dissipation b a maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a r ja AOL1413 v ds (v) = -30v i d = -38a (v gs = -10v) r ds(on) < 17m ? (v gs = -10v) r ds(on) < 36m ? (v gs = -5v) the AOL1413 uses advanced trench technology to provide excellent r ds(on) and ultra-low low gate charge with a 25v gate rating. this device is suitable for use as a load switch or in pwm applications. the device is esd protected. d s g ultra so-8 tm top view bottom tab connected to drain s g d www.freescale.net.cn 1/6 p-channel enhancement mode field general description effect transistor features
symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 10 ua v gs(th) -1.5 -2.5 -3.5 v i d(on) -70 a 13.5 17 t j =125c 18.5 24 28 36 g fs 27 s v sd -0.72 -1 v i s -38 a c iss 1760 2200 pf c oss 360 pf c rss 255 pf r g 6.4 8 ? q g (10v) 30 38 nc q g (4.5v) 11 nc q gs 7nc q gd 8nc t d(on) 11.5 ns t r 8ns t d(off) 35 ns t f 18.5 ns t rr 24 30 ns q rr 16 nc body diode reverse recovery time body diode reverse recovery charge i f =-20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250ua, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-20a reverse transfer capacitance i f =-20a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-30v, v gs =0v v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance maximum body-diode continuous current input capacitance output capacitance dynamic parameters m ? i s =1a,v gs =0v v ds =-5v, i d =20a v gs =-5v, i d =-20a turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =0.75 ? , r gen =3 ? turn-off fall time turn-on delaytime total gate charge gate drain charge v gs =0v, v ds =-15v, f=1mhz switching parameters gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =-10v, v ds =-15v, i d =-20a a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the powe r dissipation p dsm is based on t<10s r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on th e user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by bond-wires. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. * this device is guaranteed green after date code 8p11 (june 1 st 2008) rev3:april, 2008 www.freescale.net.cn 2/6 AOL1413 p-channel enhancement mode field effect transistor
t c =100c t a =25c -55 to 175 typical electrical and thermal characteristics 0 10 20 30 40 50 60 70 012345 v ds (volts) figure 1: on-region characteristics i d (a) v gs =-4v -5v -4.5 v -10v 0 5 10 15 20 25 2 2.5 3 3.5 4 4.5 5 v gs (volts) figure 2: transfer characteristics i d (a) 0.0 10.0 20.0 30.0 40.0 0 5 10 15 20 25 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-10v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-5v 0 10 20 30 40 50 0 5 10 15 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-5 v i d =20a 25c 125c i d =-20a v gs =-10v www.freescale.net.cn 3/6 AOL1413 p-channel enhancement mode field effect transistor
typical electrical and thermal characteristic s t c =100c t a =25c -55 to 175 0 2 4 6 8 10 0 5 10 15 20 25 30 35 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe o p eratin g area ( note f ) 100 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 10 s v ds =-15v i d =-20a single pulse d=t on /t t j,pk =t a +p dm .z jc .r jc r jc =4c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le puls e t j(max) =175c t c =25c www.freescale.net.cn 4/6 AOL1413 p-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 0 10 20 30 40 50 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 1 10 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to-ambient (note h) power (w) 0.0001 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le puls e single pulse www.freescale.net.cn 5/6 AOL1413 p-channel enhancement mode field effect transistor
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & w aveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds tt t t t t 90% 10% r on d(off) f off d(on) www.freescale.net.cn 6/6 AOL1413 p-channel enhancement mode field effect transistor
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